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An SOI LDMOS For Better Switch Application



Год выпуска: 2013
Автор: Arindam Biswas,Arzoo Rafique and Anup Kumar Bhattacharjee
Издательство: LAP Lambert Academic Publishing
Страниц: 84
ISBN: 9783659406751
Описание
This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-?m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-?m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.


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