Год выпуска: 2011 Автор: Angsuman Sarkar Издательство: LAP Lambert Academic Publishing Страниц: 104 ISBN: 9783846522097
Описание
Nanotechnology deals with the creation and utilization of materials, devices and systems on the nanometer-length scale. Higher speed can be achieved with a smaller device size. This rapid rate of feature size downscaling would lead to a significant short channel effects limitations. DMG MOSFET has been proposed as potential candidate to combat SCEs. Moreover, the design of both digital and analog systems in which the devices are operated in the subthreshold regime has evinced a lot of interest due to the tremendous market demand for extremely low power applications It is highly important to understand the device physics and development of corresponding accurate device model of subthreshold performances for application of MOSFET in the integrated circuit simulation and design in parallel to the process technology advancement. At present, there is a general consensus that the surface potential based modeling approach preserves device physics to describe the device operation with high...
