Год выпуска: 2012 Автор: Umar Faruque Khan Издательство: LAP Lambert Academic Publishing Страниц: 208 ISBN: 9783659118647
Описание
Scaling means systematic reduction of overall dimensions of the MOSFET device as allowed by the available technology while preserving the long channel behavior and scaling laws are used as guides to MOSFET miniaturization. Scaling depends on four parameters - supply voltage, lateral dimensions, vertical dimension and substrate doping concentration. The last two parameters are called process parameters and its scaling are tedious. The book consists only first two parameters and analyze it. The first part contains effect of supply voltage reduction on the parameters of CMOS operational amplifier with different scaling laws. And the second part contains effect of channel length reduction on the parameters of CMOS operational amplifier while keeping the same aspect ratio. From second part we can say that for a given technology and an architecture of CMOS Op-Amp, if the maximum silicon area is the constraints so within this area, what are the best possible specifications of an Op-Amp? And...