Simulation of Nano MOS Transistor Год выпуска: 2012Автор: Madhuri BorkarИздательство: LAP Lambert Academic PublishingСтраниц: 68ISBN: 9783659256202Описание This book gives an idea of modifications in fabrication steps of 22nm MOS transistor. A 22nm MOS transistor results are compared with a new modification process of stress.Their are two types of stress uniaxial and biaxial stress. Key Features: 1. Concept of Scaling. 2. Basic concept of MOS transistor. 3. Fabication process of 180nm MOS transistor. 4. Modified processes used in fabrication of 22nm MOS transistor.
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Ольга Здравствуйте Лилия, всё просто супер... огромное Вам спасибо. Спасибо огромное ещё раз за Вашу помощь! Кое-что добавила, кое-что убрала, получилось 37 листов (вместе с титульным, планами и списками). Когда получу рецензию, обязательно отчитаюсь - это и Работа, выполненная на основе ваших консультаций,!
