Subthreshold Surface Potential Model for Short-Channel Mosfet Год выпуска: 2014Автор: Angsuman SarkarИздательство: LAP Lambert Academic PublishingСтраниц: 84ISBN: 9783659126093Описание As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.
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Zlodeyrip, 16.06 Хочу поблагодарить вас за помощь которую вы мне оказывали. Диплом защитил без особых проблем. Еще раз спасибо.
