Год выпуска: 2014 Автор: Yuanwei Dong Издательство: LAP Lambert Academic Publishing Страниц: 212 ISBN: 9783659586699
Описание
This book focused on interdiffusion behaviors in SiGe heterostructures under different strain conditions. A unified Si-Ge interdiffusivity model without strain’s impact was built over the full Ge fraction range for the first time. It was demonstrated that the unified model is valid for Si-Ge interdiffusion under conventional furnace anneals, and advanced anneal techniques such as soak and spike rapid thermal anneals. In addition, the role of biaxial compressive strain in Si-Ge interdiffusion was fully clarified. Compressive strain can enhance Si-Ge interdiffusion greatly, by tens to a hundred times at certain temperature range. Moreover, some new light was shed on a more complicated case, interdiffusion with strain relaxation. The interdiffusivity models can be employed to predict and estimate interdiffusion in SiGe heterostructures for next-generation semiconductor devices, and to optimize the design of SiGe epitaxial structures and thermal budgets for fabrication processes. On the...
