High Performance GaN Light-Emitting Diode Год выпуска: 2011Автор: ZONGLIN LIИздательство: LAP Lambert Academic PublishingСтраниц: 80ISBN: 9783844395297Описание The reliability of InGaN/GaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device performances, like current-voltage characteristics, 1/f noise spectrum, leakage, static resistance, were measured. The devices underwent a 1000-hr constant-current stress test and their optical output degradation rate was examined. The results were explained by cross-related data.
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