Reliability Study Of Ingap/gaas Heterojunction Bipolar Transistors Год выпуска: 2013Автор: Xiang LiuИздательство: Scholars' PressСтраниц: 100ISBN: 9783639700503Описание Nowadays InGaP/GaAs heterojunction bipolar transistors (HBTs) are the preferred technology of high-performance microwave monolithic integrated circuits (MMICs) due to their inherently excellent characteristics. With the smaller dimensions for improving functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, reliability issues are the first concern for the commercialization. To identify the origins of the electrothermal stress-induced device performance degradations observed experimentally, 2-D TCAD simulations were carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the post-stress base current instability. The performances of InGaP/GaAs HBT-based MMICs are sensitive to the variation of core device characteristics. However, detection of this critical issue is difficult due to the circuit complexity. Thus, a practical...
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Olga Огромное Вам спасибо за рефераты, я сегодня их забрала и прочитала, в понедельник поедем сдавать в экстернат. Не могу не сказать Вам, что Вы очень талантливый и тонкий человек. Я хорошо знаю, что образование, каким бы качественным оно не было, не даёт возможности безошибочно почувствовать поставленную задачу. Высокое качество Ваших работ бесспорно, однако меня больше всего поразила точность и артистичность не просто реализации цели и задач исследования, а исполнения специалистСКОЙ по духу работы: в нашем случае это не просто рефераты на заданную тему, а рефераты совершенно определённого качественно (в смысле возраста, уровня образования и т.п.) специалиста. Выражаю Вам своё восхищение, надеюсь на дальнейшее сотрудничество.
