Год выпуска: 2010 Автор: Vishal Ajit Shah Издательство: LAP Lambert Academic Publishing Страниц: 216 ISBN: 9783838363134
Описание
Moore’s law suggests that the number of transistors which can be economically fabricated on a chip exponentially increases with time, traditionally this has been done by simple scaling of the channel within metal oxide semiconductor field effect transistors (MOSFETs). However, this approach is fast reaching fundamental limitations, which necessitates the substitution of different materials in traditional silicon devices to enhance their performance. A high composition (x>0.75) Si1-xGex alloy layer can be used as a buffer layer for such materials. However, buffers normally consist of a trade-off between structural quality factors and the physical attributes of any active channel layer are directly affected by those of the buffer which must not compromise device performance. In this work, a good quality high Ge composition SiGe buffer is investigated and is compared to more popular buffer fabrication techniques. All aspects from epitaxial growth to structural...
