Год выпуска: 2011 Автор: SABAH THAHAB Издательство: LAP Lambert Academic Publishing Страниц: 232 ISBN: 9783844301014
Описание
In this book, the design of InGaN LDs structures including multi quantum wells (MQWs) active region device are described and investigated by integrated system engineering technology computer aided design (ISE TCAD) device simulator. The parameters of the LDs structures are varied and optimized for high performance. This optimization study involves aspects such as thickness of active region, doping, thickness of stopper layer region, thickness of quantum wells and quantum barriers, number of quantum wells and several approaches to improve and achieve high efficiency, low threshold current and high output power of InGaN LDs. The basic LDs structures treated here are Fabry–Perot type InGaN double heterostructure (DH), separate confinement heterostructure (SCH) and multi quantum wells (MQWs).High performance LD has been obtained by using multi quantum wells incorporated with the optimized parameters. The lowest threshold current, higher external quantum efficiency and...
