Stability of IGZO-based Thin-Film Transistor Год выпуска: 2010Автор: Ken Hoshino and John WagerИздательство: LAP Lambert Academic PublishingСтраниц: 152ISBN: 9783838399638Описание Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.
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Василий Марина здравствуйте!!! Огромное Вам спасибо за помощь, защитился на отлично. Желаю Вам успехов и всего самого хорошего
