Structural properties of luminescent nitride semiconductors Год выпуска: 2010Автор: Vyacheslav KachkanovИздательство: LAP Lambert Academic PublishingСтраниц: 176ISBN: 9783838323336Описание This book presents the results of structural studies of InGaN, AlGaN, InAlN, and rare-earth doped (Tm, Er and Eu) GaN by Extended X-ray Absorption Fine Structure; optical characterisation of RE-doped GaN by cathodoluminescence, photoluminescence and photoluminescence excitation spectroscopies. First attempts to identify the lattice location of emitting centres in nitride semiconductors using X-ray Excited Optical Luminescence for EXAFS detection are also presented.
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мария юля вам поставили 4 говорит не был рассмотрен индивидуальная манера живописи но я думаю что он придерается в любом случае спасибо
